Indy R2000 Datasheet

The Impinj® Indy® R2000 UHF Gen2 RFID reader chip is a highly integrated, high-performance, low power, SiGe BiCMOS device for EPC Gen2 / ISO18000-63 (formerly 18000-6C) applications. The Indy R2000 reader chip supports a zero-intermediate frequency (ZIF) architecture in the worldwide UHF industrial, science, and medical (ISM) band. The Indy R2000 reader chip contains all the RF and baseband blocks to interrogate and receive data from compatible RFID tags. When used in the Indy R2000 Development Platform, which includes an example protocol processor and radio control implementation, the result is a fully functional UHF Gen2 RFID reader with market-leading performance.


  • Industry-leading modem architecture uses modern digital signal processing for high read reliability
  • Exclusive Self-Jammer Cancellation Technology ensures read reliability even with high antenna reflections
  • Fully integrated voltage-controlled oscillator (VCO) with worldwide RFID coverage
  • Integrated Power Amplifier (PA)
  • High compression point quadrature downconverting mixer
  • Integrated RF envelope detectors for forward and reverse power sense
  • Integrated multipurpose Analog-to-Digital Converters (ADCs) and Digital-to-Analog Converters (DACs)
  • Configurable digital baseband
  • High speed synchronous serial bus or 4-bit parallel bus control


This document constitutes the electrical, mechanical, and thermal specifications for the Indy R2000 RAIN RFID reader chip. It contains a functional overview, mechanical data, package signal locations, and targeted electrical specifications.

Specification Description
Air Interface Protocol EPCglobal UHF Class 1 Gen 2 / ISO 18000-63 (formerly 18000-6C)
DSB, SSB, and PR-ASK transmit modulation modes
Dense reader mode (DRM)
Transmit Output Power Configurable up to 17 dBm. External power amplifier supported for high performance applications
Transmit Gain Adjustable to > 25 dB
Modem Configurable digital baseband
Operating Frequencies 860 – 960 MHz
Package 64-pin 9 mm x 9 mm x 0.85 mm sawn QFN
Power Low power consumption, 1100 to 880 mW configuration dependent; 200μW standby
Process 0.18 μm SiGe BiCMOS
RSSI Tag dependent, configurable bandwidth
RX Sensitivity Typical: -110 dBm; DRM: -93 dBm; DRM with +10dBm self-jammer: -84dBm
Supported Regions All worldwide regions supported, including:
  • US, Canada, and other regions following US FCC 47 CFG Ch. 1 Part 15
  • Europe and other regions following ETSI EN 302 208-1 (V1.4.1)


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